Strained Silicon Heterostructures: Materials and Devices (IEE Circuits, Devices and Systems) Book

In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists.Also available:Switched Currents: an analogue technique for digital technology - ISBN 0863412947High-frequency Circuit Engineering - ISBN 0852968019The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including: -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology ManagementRead More